Cadmium Telluride (CdTe)
1,Purity :99.999% or 5N;
2,Process :THM for CSS,VTD process to produce CdTe thin-film ;
3,Analysis :ICP-MS or GDMS (All impurity elements is below 10ppm;);LPSA;XRD;
4,Particle Size :Powder:-120mesh/+60Mesh;Granule:1-6mm;(or customize),Tabelt;
5,Service :Supply MSDS; Free sample; Solutions for material application;
6,Packing :Vacuum packing or Argon shield;
7,Application: CdTe thin-film solar cells ;CZT; HgxCd1-xTe;
8,Payment term : T/T 30days after customer approval;
9,Physical character:
Molecular mass: 240.01
Band gap: 1.44 eV
Refractive index: 2.57
Density: ρ=5.85 g•cm−3
Melting Point: 1092℃
Boiling Point: 1130℃;
10, Specification:
Cadmium telluride:
CdTe-05 Grade 99.999. The content of Cadmium Telluride is above 99.999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 10 ppm;
CdTe-06 Grade 99.9999. The content of Cadmium Telluride is above 99.9999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 1ppm;
3, Physical Size:
Lump, Powder.
4, Usage:
It is mainly used in the manufacture of solar cells, infrared modulators, HgxCd1-xTe underlay, infrared electroluminescence electric eye, infrared detectors, X-ray detectors, nuclear radio activity detectors, approach visible light radiation etc.
