Indium (In)
1,Pure :99.995% - 99.9999%;
2,Technic:Electrolysis-Vacuum smelting：removal of low melting point impurities.(Sn,S,Se,Pb,Cd,As,Hg,P );
3,Analysis :ICP-MS or GDMS （5N:All impurity elements is below 10ppm）
4,Size : ; Ingot ;Granule ,Powder
5,Service :Supply MSDS ,Free sample; Provide Solutions for Material Application.
6, Physical character:
Atomic Weight: 114.818
Electronegative: 1.78
Density: ρ=7.31 g/cm3 (0-100℃)
Melting Point: 156.5985 ℃
Boiling Point: 2072 ℃
7, Specification:
High Purity Indium:
In-04 Grade 99.995. The content of Indium is above 99.995%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 50 ppm;
In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm;
Ultra Purity Indium:
In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm;
Ultra High Purity Indium:
In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm;
8, Physical Size:
bar, Ingot, Granule.
9, Usage:
It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.
10, packing:
It is packed with Dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule
